2ED4820-EM - 48V smart high-side MOSFET gate driver

Infineon

2ED4820-EM Datasheet Preview — Preview of 2ED4820-EM PDF

Datasheet Details

Part number	2ED4820-EM
Manufacturer	Infineon ↗
File Size	1.16 MB
Description	48V smart high-side MOSFET gate driver
Datasheet	2ED4820-EM-Infineon.pdf

2ED4820-EM Product details

Description

Description 2ED4820-EM is a gate driver designed for high current 48 V automotive applications, with powerful gate outputs to drive many MOSFETs in parallel in order to minimize the conduction losses.It supports the back-to-back configuration, both common source and common drain structures, thanks to its two gate outputs.In common source configuration, one gate output can be used to pre-charge highly capacitive loads.2ED4820-EM generates the supply for the gate outputs based on an integrated

Features

Extended supply voltage range: 20 - 70 V.
Two independent high-side gate driver outputs.
1 A pull down, 0.3 A pull up for fast switch off/on.
Device control, configuration and diagnostic via SPI.
Low supply current in sleep mode IBAT_Q < 5 µA.
Supports back-to-back MOSFET topologies (common drain and common source).
One bidirectional high or low-side analog current sense interface with configurable gain.
Configurable overcu.

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Published: Oct 26, 2025 |