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79CN10N - Power Transistor

79CN10N Description

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor .

79CN10N Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 78 mW 13 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualifi

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Power Transistor Infineon
Infineon 79CN10N-like datasheet

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