79CN10N Datasheet - Infineon

79CN10N Power Transistor

79CN10N Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 78 mW 13 A

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant

* Qualifi

Datasheet Details

79CN10N

1.00 MB

Power transistor.

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79CN10N 79CN10N Power Transistor Infineon

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