AIMZH120R010M1T 1200V SiC Trench MOSFET

Infineon

Description

AIMZH120R010M1T CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET .
Pin definition: 1. drain 2. source 3. Kelvin sense contact 4. gate Type AIMZH120R010M1T Package PG-TO247-4-STD-N.

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Datasheet Specifications

Part number: AIMZH120R010M1T
Manufacturer: Infineon ↗
File Size: 1.62 MB
Datasheet: AIMZH120R010M1T-Infineon.pdf
Description: 1200V SiC Trench MOSFET

Features

* PG-TO247-4-STD-NT6.7
* VDSS = 1200 V at Tvj = -55175°C
* IDDC = 202 A at TC = 25°C
* RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C
* New performance-optimized chip technology (Gen1p) with improved RDSon
* A FOM
* Increased recommended turn-on voltage (VGS(on

Applications

* On-board charger
* DC/DC converter
* Auxiliary drives Product validation

AIMZH120R010M1T Distributors

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AIMZH120R010M1T 1200V SiC Trench MOSFET Infineon

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