AIMZHN120R010M1T - 1200V SiC Trench MOSFET

Infineon

AIMZHN120R010M1T Datasheet Preview — Preview of AIMZHN120R010M1T PDF

Datasheet Details

Part number	AIMZHN120R010M1T
Manufacturer	Infineon ↗
File Size	1.65 MB
Description	1200V SiC Trench MOSFET
Datasheet	AIMZHN120R010M1T-Infineon.pdf

AIMZHN120R010M1T Product details

Description

Pin definition: 1 drain 2 source 3 Kelvin sense contact 4 gate Type AIMZHN120R010M1T Package PG-TO247-4-STD-NN6.7 Marking A12M1N010 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-11-30 AIMZHN120R010M1T CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description

Features

PG-TO247-4-STD-NN6.7.
VDSS = 1200 V at Tvj = -55175°C.
IDDC = 202 A at TC = 25°C.
RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C.
New performance-optimized chip technology (Gen1p) with improved RDSon.
A FOM.
Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on).
Best in class switching energy for lower switching losses and reduced cooling efforts.
Lowest device capacitances for higher switching speeds and higher.

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Published: May 13, 2025 |