AIMZHN120R010M1T - 1200V SiC Trench MOSFET
Pin definition: 1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Type AIMZHN120R010M1T Package PG-TO247-4-STD-NN6.7 Marking A12M1N010 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision
AIMZHN120R010M1T Features
* PG-TO247-4-STD-NN6.7
* VDSS = 1200 V at Tvj = -55175°C
* IDDC = 202 A at TC = 25°C
* RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C
* New performance-optimized chip technology (Gen1p) with improved RDSon
* A FOM
* Increased recommended turn-on voltage (VGS(on
