AIMZHN120R010M1T Datasheet - Infineon

AIMZHN120R010M1T 1200V SiC Trench MOSFET

Pin definition: 1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Type AIMZHN120R010M1T Package PG-TO247-4-STD-NN6.7 Marking A12M1N010 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision.

AIMZHN120R010M1T Features

* PG-TO247-4-STD-NN6.7

* VDSS = 1200 V at Tvj = -55175°C

* IDDC = 202 A at TC = 25°C

* RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C

* New performance-optimized chip technology (Gen1p) with improved RDSon

* A FOM

* Increased recommended turn-on voltage (VGS(on

AIMZHN120R010M1T Datasheet (1.65 MB)