AUIRF7103Q - Dual N-Channel MOSFET

Product Overview

Infineon

Datasheet Details

Part number	AUIRF7103Q
Manufacturer	Infineon
File Size	420.70 KB
Description	Dual N-Channel MOSFET
Datasheet	AUIRF7103Q Datasheet
Additional preview pages of the AUIRF7103Q datasheet.

Product details

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

Advanced Planar Technology.
Dual N Channel MOSFET.
Low On-Resistance.
Logic Level Gate Drive.
Dynamic dv/dt Rating.
175°C Operating Temperature.
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS RDS(on) max. ID.

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Published: Dec 1, 2016 |