AUIRF7103Q Datasheet - Infineon

AUIRF7103Q Dual N-Channel MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF7103Q Features

* Advanced Planar Technology

* Dual N Channel MOSFET

* Low On-Resistance

* Logic Level Gate Drive

* Dynamic dv/dt Rating

* 175°C Operating Temperature

* Fast Switching

* Repetitive Avalanche Allowed up to Tjmax

* Lead-Free, RoHS Compliant

* Automotive Qualifie

AUIRF7103Q-Infineon.pdf