AUIRF7207Q

Power MOSFET

Infineon

AUIRF7207Q Features

* Advanced Process Technology

* Low On-Resistance

* Logic Level Gate Drive

* P-Channel MOSFET

* Dynamic dV/dT Rating

* 150°C Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* Lead-Free, RoHS Compliant

* Automotive Qualified

* AUTOMOTIVE GRA

AUIRF7207Q General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF7207Q Datasheet (381.20 KB)