AUIRFU5505 Datasheet - Infineon

Power MOSFET

AUIRFU5505 Features

* Advanced Planar Technology

* Low On-Resistance

* P-Channel

* Dynamic dv/dt Rating

* 150°C Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* Repetitive Avalanche Allowed up to Tjmax

* Lead-Free, RoHS Compliant

* Automotive Qualified

* D

AUIRFU5505 General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRFU5505 Datasheet (514.11 KB)