Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel
AUIRFU5505 Features
* Advanced Planar Technology
* Low On-Resistance
* P-Channel
* Dynamic dv/dt Rating
* 150°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualified
* D
Datasheet Details
AUIRFU5505, AUIRFR5505
514.11 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: AUIRFU5505, AUIRFR5505.
Please refer to the document for exact specifications by model.
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