AUIRFU024N

Power MOSFET

International Rectifier

AUIRFU024N Features

* l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified

* V(BR)DSS

AUIRFU024N General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well.

AUIRFU024N Datasheet (405.94 KB)

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AUIRFU024N

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International Rectifier

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405.94 KB

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Power mosfet.

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AUIRFU024N Power MOSFET International Rectifier

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AUIRFU024N Features

AUIRFU024N General Description

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