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BAT15-03W
Single silicon RF Schottky diode
Product description
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Feature list
• Low inductance LS = 1.8 nH (typical) • Low capacitance C = 0.28 pF (typical) at 1 MHz • Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm) • Pb-free, RoHS compliant and halogen-free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
BAT15-03W Datasheet
