Description
BSB044N08NN3 G OptiMOS™3 Power-MOSFET .
Features
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Superior thermal resistance
* Dual sided cooling
* low parasitic inductance
Product Summary VDS RDS(on),max ID
80 V 4.4 mW 90 A
CanPAKTM M MG-WDSON-2
* L
Applications
* Compatible with DirectFET® package MN footprint and outline2)
Type BSB044N08NN3 G
Package MG-WDSON-2
Outline MN
Marking 0208
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
ID
V GS=10 V, T C=25 °C
90
V GS=10
