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BSB044N08NN3G Power MOSFET

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Description

BSB044N08NN3 G OptiMOS™3 Power-MOSFET .

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Features

* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Superior thermal resistance
* Dual sided cooling
* low parasitic inductance Product Summary VDS RDS(on),max ID 80 4.4 90 CanPAKTM M MG-WDSON-2
* Low prof

Applications

* Compatible with DirectFET® package MN footprint and outline2) V mW A Type BSB044N08NN3 G Package MG-WDSON-2 Outline MN Marking 0208 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current I D V GS=10 V, T C=25 °C 90

BSB044N08NN3G Distributors

📁 Related Datasheet

BSB01503HA3-00CGE BSB01703HA3-00CAJ BSB0203HA3-00CER BSBE1 BSBE2 BSBN2

📌 All Tags

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