BSZ014NE2LS5IF MOSFET

Infineon

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSZ014NE2LS5IF Data Sheet Rev.2.1 Final Power Manage.
Features. Optimized for synchronous rectification. Monolithic integrated Schottky like diode. Very low on-resistance RDS(on.

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Datasheet Specifications

Part number: BSZ014NE2LS5IF
Manufacturer: Infineon ↗
File Size: 1.56 MB
Datasheet: BSZ014NE2LS5IF-Infineon.pdf
Description: MOSFET

Features

* Optimized for synchronous rectification
* Monolithic integrated Schottky like diode
* Very low on-resistance RDS(on) @ VGS=4.5 V
* Excellent gate charge x RDS(on) product (FOM)
* 100% avalanche tested
* N-channel
* Qualified according to JEDE

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 25 V RDS(on),max 1.45 mΩ ID 40 A QOSS 26 nC QG(0V. .4.5V) 11 nC OptiMOSTM5 Power-MOSFET, 25 V BSZ014NE2LS5IF TSDSON-8 FL (e

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