* Optimized for high performance buck converters
* Monolithic integrated Schottky-like diode
* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* N-channel
* Qualified according to JEDEC1) for target applications
* Pb-free le
BSZ017NE2LS5I Datasheet (1.56 MB)
BSZ017NE2LS5I
1.56 MB
Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSZ017NE2LS5I Data Sheet Rev. 2.0 Final Power Managem.
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