BSZ017NE2LS5I MOSFET

Infineon

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSZ017NE2LS5I Data Sheet Rev.2.0 Final Power Managem.
Features. Optimized for high performance buck converters. Monolithic integrated Schottky-like diode. Very low on-resistance.

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Datasheet Specifications

Part number: BSZ017NE2LS5I
Manufacturer: Infineon ↗
File Size: 1.56 MB
Datasheet: BSZ017NE2LS5I-Infineon.pdf
Description: MOSFET

Features

* Optimized for high performance buck converters
* Monolithic integrated Schottky-like diode
* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* N-channel

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 25 V RDS(on),max 1.7 mΩ ID 40 A QOSS 17.5 nC QG(0V. .4.5V) 10.5 nC OptiMOSTM5 Power-MOSFET, 25 V BSZ017NE2LS5I TSDSON-8 FL

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