BSZ018NE2LSI Power-Transistor

Infineon

Description

OptiMOSTM Power-MOSFET .

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Datasheet Specifications

Part number: BSZ018NE2LSI
Manufacturer: Infineon ↗
File Size: 565.37 KB
Datasheet: BSZ018NE2LSI-Infineon.pdf
Description: Power-Transistor

Features

* Optimized for high performance Buck converter
* Monolithic integrated Schottky like diode
* Very low on-resistance R DS(on) @ V GS=4.5 V
* 100% avalanche tested
* N-channel

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 BSZ018NE2LSI Product Summary VDS RDS(on),max ID QOSS QG(0V. .10V) 25 V 1.8 mW 40 A 23 nC 36 nC PG-TSDSON-8 (fused leads) Type Package BSZ018NE2LSI PG-TSDSON-8 (fused leads) Marking 018NE2I Maximum

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BSZ018NE2LSI Power-Transistor Infineon

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