BSZ067N06LS3G Power MOSFET

Infineon

Description

BSZ067N06LS3 G OptiMOSTM3 Power-Transistor .

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Datasheet Specifications

Part number: BSZ067N06LS3G
Manufacturer: Infineon ↗
File Size: 264.64 KB
Datasheet: BSZ067N06LS3G_Infineon.pdf
Description: Power MOSFET

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, logic level
* 100% avalanche tested
* Pb-free plating

Applications

* Halogen-free according to IEC61249-2-21 Type BSZ067N06LS3 G Product Summary V DS R DS(on),max ID 60 6.7 20 V mΩ A Package Marking PG-TSDSON-8 067N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V

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