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BSZ086P03NS3EG Power MOSFET

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Description

BSZ086P03NS3E G OptiMOSTM P3 Power-Transistor .

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Features

* single P-Channel in S3O8

Applications

* 150 °C operating temperature
* V GS=25 V, specially suited for notebook applications
* Pb-free; RoHS compliant
* ESD protected
* applications: battery management, load switching
* Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on)

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