BSZ086P03NS3G Power MOSFET

Infineon

Description

BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor .

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Datasheet Specifications

Part number: BSZ086P03NS3G
Manufacturer: Infineon ↗
File Size: 321.58 KB
Datasheet: BSZ086P03NS3G_Infineon.pdf
Description: Power MOSFET

Features

* single P-Channel in S3O8

Applications

* 150 °C operating temperature
* V GS=25 V, specially suited for notebook applications
* Pb-free; RoHS compliant
* applications: battery management, load switching
* Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 8.6 -40 PG-T

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