CFY25 HiRel X-Band GaAs MOSFET

Infineon

CFY25 Description

CFY25 HiRel X-Band GaAs General Purpose MESFET * HiRel discrete and Microwave semiconductor * For professional pre- and driver- ampli.

Datasheet Details

📁 Related Datasheet

CFY25-17 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
CFY27 - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
CFY27-38 - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
CFY27-P - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
CFY30 - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) (Siemens Semiconductor Group)
CFY35 - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) (Siemens Semiconductor Group)

📌 All Tags

Infineon CFY25-like datasheet