📁 CFY25 Similar Datasheet
- CFY25-17 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
- CFY25-20 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
- CFY25-23 - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
- CFY27 - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
- CFY27-38 - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
- CFY27-P - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
- CFY30 - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) (Siemens Semiconductor Group)
- CFY35 - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) (Siemens Semiconductor Group)
CFY25-Infineon.pdf
