CFY25-20, Siemens Semiconductor Group
GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic dis.
CFY25-20, Infineon
CFY25
HiRel X-Band GaAs General Purpose MESFET
• HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f.
CFY25-23, Siemens Semiconductor Group
GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic dis.
CFY25-23, Infineon
CFY25
HiRel X-Band GaAs General Purpose MESFET
• HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f.
CFY25-23P, Infineon
CFY25
HiRel X-Band GaAs General Purpose MESFET
• HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f.
CFY25-17, Siemens Semiconductor Group
GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic dis.
CFY25-P, Infineon
CFY25
HiRel X-Band GaAs General Purpose MESFET
• HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f.
CFY25, Siemens Semiconductor Group
GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic dis.
