DF4-19MR20W3M1HF_B11 Datasheet, Igbt, Infineon

DF4-19MR20W3M1HF_B11 Features

  • Igbt
  • Electrical features - VDSS = 2000 V - IDN = 60 A / IDRM = 120 A - High current density - Low inductive design
  • Mechanical features - Rugged mounting due to integrated

PDF File Details

Part number:

DF4-19MR20W3M1HF_B11

Manufacturer:

Infineon ↗

File Size:

608.97kb

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📄 Datasheet

Description:

Igbt. J J Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1

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DF4-19MR20W3M1HF_B11 Application

  • Applications
  • Solar applications Product validation
  • Qualified for industrial applications according to the relevant tests of IEC

TAGS

DF4-19MR20W3M1HF_B11
IGBT
Infineon

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Stock and price

Infineon Technologies AG
MOSFET 4N-CH 2000V 50A AG-EASY3B
DigiKey
DF419MR20W3M1HFB11BPSA1
1 In Stock
Qty : 16 units
Unit Price : $249.51
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