F3L100R07W2E3_B11 Datasheet - Infineon

F3L100R07W2E3_B11 IGBT-Module

Technische Information / Technical Information IGBT-Module IGBT-modules F3L100R07W2E3_B11 EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC Vorläufige Daten / Preliminary Data J Typische Anwendungen 3-Level-Applikationen Motorantriebe Solar Anwendungen USV-Systeme Elektrische Eigenschaften Erhöhte Sperrspann.

F3L100R07W2E3_B11 Features

* Increased blocking voltage capability to 650V

* Low inductive design

* Low Switching Losses

* Low VCEsat Mechanical Features

* Al2O3 Substrate with Low Thermal Resistance

* Compact design

* PressFIT Contact Technology

* Rugged mountin

F3L100R07W2E3_B11-Infineon.pdf