F3L15R12W2H3_B27 Datasheet - Infineon

F3L15R12W2H3_B27 IGBT

Technische Information / Technical Information IGBT-Module IGBT-modules F3L15R12W2H3_B27 Vorläufige Daten / Preliminary Data J VCES = 1200V IC nom = 15A / ICRM = 30A Typische Anwendungen 3-Level-Applikationen Solar Anwendungen Elektrische Eigenschaften Niederinduktives Design Niedrige Schaltverluste Niedriges VCEsat Mechanische Eigenschaften Al2O3 Substrat mit kleinem thermischen Widerstand Kompaktes Design Pres.

F3L15R12W2H3_B27 Features

* Low inductive design

* Low Switching Losses

* Low VCEsat Mechanical Features

* Al2O3 Substrate with Low Thermal Resistance

* Compact design

* PressFIT Contact Technology

* Rugged mounting due to integrated mounting clamps Module Label Code B

F3L15R12W2H3_B27-Infineon.pdf