F3L150R07W2E3_B11 Datasheet, Igbt, Infineon

F3L150R07W2E3_B11 Features

• Igbt
• Increased blocking voltage capability to 650V
• Low inductive design
• Low Switching Losses
• Low VCEsat Mechanical Features
• Al2O3 Substrate

PDF File Details

Part number:

F3L150R07W2E3_B11

Manufacturer:

Infineon ↗

File Size:

830.23kb

Download:

📄 Datasheet

Description:

Igbt.

F3L150R07W2E3_B11 Application

• Applications
• 3-Level-Applications
• Solar Applications
• UPS Systems Electrical Features
• Increased blocking volt

TAGS

F3L150R07W2E3_B11

Infineon

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