FS3L25R12W2H3_B11 Datasheet - Infineon

FS3L25R12W2H3_B11 IGBT

Technische Information / Technical Information IGBT-Modul IGBT-Module FS3L25R12W2H3_B11 EasyPACK Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC Vorläufige Daten / Preliminary Data J VCES = 1200V IC nom = 25A / ICRM = 50A Typische Anwendungen 3-Level-Applikationen Solar Anwendungen Elektrische Eigenschaften High Speed .

FS3L25R12W2H3_B11 Features

* High speed IGBT H3

* Low inductive design

* Low switching losses Mechanical Features

* Al2O3 substrate with low thermal resistance

* Compact design

* PressFIT contact technology

* Rugged mounting due to integrated mounting clamps Module Labe

FS3L25R12W2H3_B11-Infineon.pdf