FS30AS-06 Datasheet - Mitsubishi Electric Semiconductor

FS30AS-06 N-Channel Power MOSFET

FS30AS-06 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING 6.5 5.0 ± 0.2 r Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 5.5 ± 0.2 10MAX. 2.3MIN. 1.0MAX. ¡10V DRIVE ¡VDSS 60V ¡rDS (ON) (MAX) 30mΩ ¡ID 30A ¡Integrated Fast Recovery Diode (TYP.) 65ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 0.9MAX. 2.3 1.0 2.3 A 0.5 ± 0.2 0.8 2.3 qwe wr q e q GATE w DRAIN e SOURCE r DRAIN MP-3 MAXIMUM RATINGS (Tc = 25°C) Symbol VDSS V.

FS30AS-06_MitsubishiElectricSemiconductor.pdf