* High DC stability
* High short-circuit capability
* Low VCEsat
* Unbeatable robustness
* Tvj op = 150°C
* VCEsat with positive temperature coefficient Mechanical Features
* AlSiC base plate for increased thermal cycling capability
FZ1000R33HL3 Datasheet (520.04 KB)
FZ1000R33HL3
520.04 KB
Igbt.
FZ1000R33HL3 IHM-B Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 d.
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