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G25h1203 - High speed IGBT

G25h1203 Description

IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching se.

G25h1203 Features

* TRENCHSTOPTM technology offering
* best in class switching performance: less than 500µJ total switching losses achievable
* very low VCEsat
* low EMI
* maximum junction temperature 175°C

G25h1203 Applications

* Pb-free lead plating; RoHS compliant
* complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ Applications:
* solar inverters
* uninterruptible power supplies
* welding converters
* converters with high switching frequency Package

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High speed IGBT Infineon
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