G50N60HS Datasheet (Infineon)

G50N60HS, High Speed IGBT

SGW50N60HS www.DataSheet4U.com High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 µs Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating;