G50N03A Datasheet, Mosfet, GOFORD

✔ G50N03A Features

� VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 30V 10 mΩ 6.2 mΩ 50A � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and curr

✔ G50N03A Application

. GENERAL FEATURES � VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 30V 10 mΩ 6.2 mΩ 50A � High densit

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Part number:

G50N03A

Manufacturer:

GOFORD

File Size:

2.32MB

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📄 Datasheet

Description:

Mosfet. The G50N03A uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide

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G50N03A MOSFET GOFORD