G50N03A MOSFET

Description

GOFORD .
The G50N03A uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

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Datasheet Specifications

Part number: G50N03A
Manufacturer: GOFORD
File Size: 2.32 MB
Datasheet: G50N03A-GOFORD.pdf
Description: MOSFET

Features

* VDSS RDS(ON) RDS(ON) ID @ 4.5V(Typ) @10V (Typ) 30V 10 mΩ 6.2 mΩ 50A
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special pr

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G50N03A MOSFET GOFORD

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