IAUC100N04S6N022 Datasheet - Infineon

IAUC100N04S6N022 - Power-Transistor

IAUC100N04S6N022 Features

* OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 2.2 mW 100 A PG-TDSON-8

* N-channel - Enhancement mode - Normal Level

* AEC Q101 qualified

* MSL1 up to 260°C peak reflow 1

* 175°C operating temperature

* Green Prod

Datasheet Details

IAUC100N04S6N022

666.10 KB

Power-transistor.

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