Datasheet Specifications
- Part number
- IFX007T
- Manufacturer
- Infineon ↗
- File Size
- 1.35 MB
- Datasheet
- IFX007T-Infineon.pdf
- Description
- High Current PN Half Bridge
Description
High Current PN Half Bridge with Integrated Driver IFX007T Industrial & Multi Purpose NovalithIC™ 1 Overview Quality Requirement Category: Industrial.Features
* Path resistance of max. 12.8 mΩ @ 25°C (typ. 10.0 mΩ @ 25°C) High side: max. 6.5 mΩ @ 25°C (typ. 5.3 mΩ @ 25°C) Low side: max. 6.3 mΩ @ 25°C (typ. 4.7 mΩ @ 25°C)Applications
* It is part of the Industrial & Multi Purpose NovalithIC™ family containing one p-channel high-side MOSFET and one n-channel low-side MOSFET with an integrated driver IC in one package. Due to the p-channel high-side switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing toIFX007T Distributors
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