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IGC07T120T6L
IGBT4 Low Power Chip
Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type IGC07T120T6L
VCE 1200V
ICn 4A
Die Size 2.54 x 2.72 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.pos sible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
2.54 x 2.72
1.029 x 1.248 0.358 x 0.514
mm 2
6.9 / 2.
IGC07T120T6L Datasheet
