* C High speed H3 technology offers:
* High efficiency in hard switching and resonant topologies
* 10µsec short circuit withstand time at Tvj=175°C
* Easy paralleling capability due to positive temperature coefficient in VCEsat
* Low EMI
* Low Gate Charge QG
IKQ50N120CH3 Datasheet (1.59 MB)
IKQ50N120CH3
1.59 MB
Igbt.
IKQ50N120CH3
High speed switching series third generation IGBT
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery .
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