IKW40N65F5A - IGBT
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2 Table of Contents .
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3
IKW40N65F5A Features
* C High speed F5 technology offering
* Best-in-Class efficiency in hard switching and resonant topologies
* 650V breakdown voltage
* Low gate charge QG
* IGBT copacked with RAPID 1 fast and soft antiparallel diode
* Maximum junction temperature 175°C
