IKW25N120H3 Datasheet - Infineon Technologies

High speed IGBT

IKW25N120H3 Features

* VCE = 1200 V

* IC = 25 A

* Very low VCE,sat

* Low EMI

* Very soft, fast recovery antiparallel diode

* Maximum junction temperature Tvjmax = 175°C

* Qualified according to JEDEC for target applications

* Pb-free lead plating; RoHS comp

IKW25N120H3 General Description

Type IKW25N120H3 C G E Package PG-TO247-3 Marking K25H1203 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.00 2021-09-08 IKW25N120H3 High speed DuoPack: IGBT in Trench and Fieldstop technology Table of contents Table of contents .

IKW25N120H3 Datasheet (1.60 MB)

IKW25N120H3 Datasheet Preview — Preview of IKW25N120H3 PDF

Datasheet Details

Part number:

IKW25N120H3

Manufacturer:

Infineon ↗ Technologies

File Size:

1.60 MB

Description:

High speed igbt.
IKW25N120H3 High speed DuoPack: IGBT in Trench and Fieldstop technology High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast r.

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IKW25N120H3 Features

IKW25N120H3 General Description

Datasheet Details

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