* C TRENCHSTOPTM technology offering
* very low VCEsat
* low EMI
* Very soft, fast recovery anti-parallel diode
* maximum junction temperature 175°C
* qualified according to JEDEC for target applications
* Pb-free lead plating; RoHS compliant
IKW25N120H3 Datasheet (2.07 MB)
IKW25N120H3
Infineon ↗ Technologies
2.07 MB
Igbt.
IGBT
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
IKW25N120H3
1200V high speed switching .
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