IKW30N60DTP Datasheet - Infineon

IKW30N60DTP - IGBT

IKW30N60DTP Features

* TRENCHSTOPTM technology offering

* very low VCEsat

* low turn-off losses

* short tail current

* low EMI

* Very soft, fast recovery anti-parallel diode

* maximum junction temperature 175°C

* qualified according to JEDEC for target applications

Datasheet Details

IKW30N60DTP

1.52 MB

Igbt.

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