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IKW30N60H3 Datasheet - Infineon Technologies

IKW30N60H3 IGBT

IKW30N60H3 Features

* C TRENCHSTOPTM technology offering

* very low VCEsat

* low EMI

* Very soft, fast recovery anti-parallel diode

* maximum junction temperature 175°C

* qualified according to JEDEC for target applications

* Pb-free lead plating; RoHS compliant

IKW30N60H3_InfineonTechnologies.pdf

Preview of IKW30N60H3 PDF
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Datasheet Details

Part number:

IKW30N60H3

Manufacturer:

Infineon ↗ Technologies

File Size:

2.07 MB

Description:

Igbt.

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