Datasheet Details
- Part number
- IKW30N65EL5
- Manufacturer
- Infineon ↗
- File Size
- 1.71 MB
- Datasheet
- IKW30N65EL5-Infineon.pdf
- Description
- IGBT
IKW30N65EL5 Description
IKW30N65EL5 Low VCE(sat) series fifth generation Low VCE(sat) IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel dio.
IKW30N65EL5 Features
* C
Low VCE(sat) L5 technology offering
* Very low collector-emitter saturation voltage VCEsat
* Best-in-Class tradeoff between conduction and switching losses
* 650V breakdown voltage
* Low gate charge QG
* Maximum junction temperature 175°C
* Qualif
IKW30N65EL5 Applications
* Pb-free lead plating
* RoHS compliant
* Complete product spectrum and PSpice models: http://www. infineon. com/igbt/
G E
Applications:
* Uninterruptible power supplies
* Solar photovoltaic inverters
* Welding machines
G C E
Key Performance and Pack
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