IKW30N65EL5 Datasheet - Infineon

IKW30N65EL5 IGBT

IKW30N65EL5 Features

* C Low VCE(sat) L5 technology offering

* Very low collector-emitter saturation voltage VCEsat

* Best-in-Class tradeoff between conduction and switching losses

* 650V breakdown voltage

* Low gate charge QG

* Maximum junction temperature 175°C

* Qualif

Datasheet Details

IKW30N65EL5

1.71 MB

Igbt.

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