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IKW30N65EL5 IGBT

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Description

IKW30N65EL5 Low VCE(sat) series fifth generation Low VCE(sat) IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel dio.

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Features

* C Low VCE(sat) L5 technology offering
* Very low collector-emitter saturation voltage VCEsat
* Best-in-Class tradeoff between conduction and switching losses
* 650V breakdown voltage
* Low gate charge QG
* Maximum junction temperature 175°C
* Qualif

Applications

* Pb-free lead plating
* RoHS compliant
* Complete product spectrum and PSpice models: http://www. infineon. com/igbt/ G E Applications:
* Uninterruptible power supplies
* Solar photovoltaic inverters
* Welding machines G C E Key Performance and Pack

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