IKW50N65ET7

IGBT

Infineon

IKW50N65ET7 Features

* VCE = 650 V

* IC = 50 A

* Very low VCE,sat

* Low turn-off losses

* Short tail current

* Reduced EMI

* Very soft, fast recovery antiparallel diode

* Maximum junction temperature Tvjmax = 175°C

* Qualified according to JEDEC for

IKW50N65ET7 General Description

Package pin definition:

* Pin C & backside - Collector

* Pin E - Emitter

* Pin G - Gate C TO-247

* 3Pin 2021-10-27 restricted Type IKW50N65ET7 G E Package PG-TO247-3 Marking K50EET7 Copyright © Infineon T Datasheet www.infineon.com Please read the sections "I.

IKW50N65ET7 Datasheet (1.46 MB)