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IKY120N65EH7

IGBT

IKY120N65EH7 Features

* VCE = 650 V

* IC = 120 A

* Low switching losses

* Very low collector-emitter saturation voltage VCEsat

* Very soft, fast recovery antiparallel diode

* Smooth switching behavior

* Humidity robustness

* Optimized for hard switching

IKY120N65EH7 General Description

Type IKY120N65EH7 Package PG-TO247-4-PLUS-NN5.1 Marking K120EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-27 IKY120N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Tab.

IKY120N65EH7 Datasheet (2.14 MB)

Preview of IKY120N65EH7 PDF

Datasheet Details

Part number:

IKY120N65EH7

Manufacturer:

Infineon ↗

File Size:

2.14 MB

Description:

Igbt.
IKY120N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 t.

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IKY120N65EH7 IGBT Infineon

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