IMBG120R234M2H - 1200V SiC MOSFET
IMBG120R234M2H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 6.2 A at TC = 100°C
* RDS(on) = 233.9 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold volta
