IMBG120R234M2H Datasheet - Infineon

IMBG120R234M2H 1200V SiC MOSFET

IMBG120R234M2H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 6.2 A at TC = 100°C

* RDS(on) = 233.9 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand time 2 µs

* Benchmark gate threshold volta

Datasheet Details

IMBG120R234M2H

1.25 MB

1200v sic mosfet.

📁 Related Datasheet

IMBG120R220M1H 1200V SiC Trench MOSFET (Infineon)

IMBG120R008M2H Silicon Carbide MOSFET (Infineon)

IMBG120R012M2H 1200V SiC MOSFET (Infineon)

IMBG120R017M2H 1200V SiC MOSFET (Infineon)

IMBG120R022M2H 1200V SiC MOSFET (Infineon)

IMBG120R026M2H 1200V SiC MOSFET (Infineon)

IMBG120R030M1H 1200V SiC Trench MOSFET (Infineon)

IMBG120R040M2H Silicon Carbide MOSFET (Infineon)

TAGS

IMBG120R234M2H IMBG120R234M2H 1200V SiC MOSFET Infineon

IMBG120R234M2H Distributor