IMBG120R008M2H Datasheet, Mosfet, Infineon

IMBG120R008M2H Features

• Mosfet
• VDSS = 1200 V at Tvj = 25°C
• IDDC = 144 A at TC = 100°C
• RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Overload

PDF File Details

Part number:

IMBG120R008M2H

Manufacturer:

Infineon ↗

File Size:

1.25MB

Download:

📄 Datasheet

Description:

Silicon carbide mosfet. Pin definition:

Pin 1 - Gate

Pin 2 - Kelvin sense contact

Pin 3…7 - Source

Tab - Drain Note:

IMBG120R008M2H Application

• Applications
• EV Charging
• Online UPS/Industrial UPS
• String inverter
• General purpose drives (GPD) Product val

TAGS

IMBG120R008M2H

Infineon

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