Part number:
IMBG120R008M2H
Manufacturer:
File Size:
1.25 MB
Description:
Silicon carbide mosfet.
IMBG120R008M2H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 144 A at TC = 100°C
* RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage
Datasheet Details
IMBG120R008M2H
1.25 MB
Silicon carbide mosfet.
IMBG120R008M2H Distributor
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