Datasheet Details
- Part number
- IMBG120R008M2H
- Manufacturer
- Infineon ↗
- File Size
- 1.25 MB
- Datasheet
- IMBG120R008M2H-Infineon.pdf
- Description
- Silicon Carbide MOSFET
IMBG120R008M2H Description
IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET .
Pin definition:.
Pin 1 - Gate.
Pin 2 - Kelvin sense contact.
Pin 3…7 - Source.
Tab - Drain Note: the source and se.
IMBG120R008M2H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 144 A at TC = 100°C
* RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage
IMBG120R008M2H Applications
* EV Charging
* Online UPS/Industrial UPS
* String inverter
* General purpose drives (GPD)
Product validation
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