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IMBG120R008M2H - Silicon Carbide MOSFET

IMBG120R008M2H Description

IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET .
Pin definition:. Pin 1 - Gate. Pin 2 - Kelvin sense contact. Pin 3…7 - Source. Tab - Drain Note: the source and se.

IMBG120R008M2H Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 144 A at TC = 100°C
* RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage

IMBG120R008M2H Applications

* EV Charging
* Online UPS/Industrial UPS
* String inverter
* General purpose drives (GPD) Product validation

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