Datasheet4U Logo Datasheet4U.com

IMBG120R008M2H Datasheet - Infineon

IMBG120R008M2H - Silicon Carbide MOSFET

IMBG120R008M2H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 144 A at TC = 100°C

* RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand time 2 µs

* Benchmark gate threshold voltage

IMBG120R008M2H-Infineon.pdf

Preview of IMBG120R008M2H PDF
IMBG120R008M2H Datasheet Preview Page 2 IMBG120R008M2H Datasheet Preview Page 3

Datasheet Details

Part number:

IMBG120R008M2H

Manufacturer:

Infineon ↗

File Size:

1.25 MB

Description:

Silicon carbide mosfet.

IMBG120R008M2H Distributor

📁 Related Datasheet

📌 All Tags