IMBG120R008M2H Datasheet - Infineon

IMBG120R008M2H Silicon Carbide MOSFET

IMBG120R008M2H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 144 A at TC = 100°C

* RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand time 2 µs

* Benchmark gate threshold voltage

Datasheet Details

IMBG120R008M2H

1.25 MB

Silicon carbide mosfet.

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