IMBG120R008M2H Silicon Carbide MOSFET

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Description

IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET .
Pin definition:. Pin 1 - Gate. Pin 2 - Kelvin sense contact. Pin 3…7 - Source. Tab - Drain Note: the source and se.

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Datasheet Specifications

Part number: IMBG120R008M2H
Manufacturer: Infineon ↗
File Size: 1.25 MB
Datasheet: IMBG120R008M2H-Infineon.pdf
Description: Silicon Carbide MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 144 A at TC = 100°C
* RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage

Applications

* EV Charging
* Online UPS/Industrial UPS
* String inverter
* General purpose drives (GPD) Product validation

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Silicon Carbide MOSFET Infineon

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