IMBG120R008M2H

Silicon Carbide MOSFET

Infineon

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	Infineon Technologies AG	IMBG120R008M2HXTMA1	SIC DISCRETE	DigiKey	932	10 units	$26.8	🛒 Buy Now

Download Datasheet (1.25 MB)

IMBG120R008M2H Datasheet Preview — Preview of IMBG120R008M2H Datasheet

Datasheet Details

Part number:

IMBG120R008M2H

Manufacturer:

Infineon ↗

File Size:

1.25 MB

Description:

Silicon carbide mosfet.
IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silico.
Pin definition: * Pin 1 - Gate * Pin 2 - Kelvin sense contact * Pin 3…7 - Source * Tab - Drain Note:.

✔ IMBG120R008M2H Features

VDSS = 1200 V at Tvj = 25°C
IDDC = 144 A at TC = 100°C
RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C
Very low switching losses
Overload operation up to Tvj = 200

✔ IMBG120R008M2H Application

EV Charging
Online UPS/Industrial UPS
String inverter
General purpose drives (GPD) Product validati

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IMBG120R008M2H Silicon Carbide MOSFET Infineon

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