Datasheet Details
- Part number
- IMBG120R030M1H
- Manufacturer
- Infineon ↗
- File Size
- 1.23 MB
- Datasheet
- IMBG120R030M1H-Infineon.pdf
- Description
- 1200V SiC Trench MOSFET
IMBG120R030M1H Description
IMBG120R030M1H IMBG120R030M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology .
IMBG120R030M1H Features
* Very low switching losses
* Short circuit withstand time 3 µs
* Fully controllable dV/dt
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* Robust against parasitic turn on, 0V turn-off gate voltage can be applied
* Robust body diode for hard commutation
* . XT interco
IMBG120R030M1H Applications
* Drives
* Infrastructure
* Charger
* Energy generation - Solar string inverter and solar optimizer
* Industrial power supplies - Industrial UPS
Gate pin 1
Sense pin 2
Drain TAB
Source pin 37
Product validation
Qualified for industrial applications according to the relevan
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