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IMBG120R030M1H Datasheet - Infineon

IMBG120R030M1H - 1200V SiC Trench MOSFET

IMBG120R030M1H Features

* Very low switching losses

* Short circuit withstand time 3 µs

* Fully controllable dV/dt

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* Robust against parasitic turn on, 0V turn-off gate voltage can be applied

* Robust body diode for hard commutation

* .XT interco

IMBG120R030M1H-Infineon.pdf

Preview of IMBG120R030M1H PDF
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Datasheet Details

Part number:

IMBG120R030M1H

Manufacturer:

Infineon ↗

File Size:

1.23 MB

Description:

1200v sic trench mosfet.

IMBG120R030M1H Distributor

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IMBG120R030M1H 1200V SiC Trench MOSFET Infineon