Part number:
IMBG120R040M2H
Manufacturer:
File Size:
1.26 MB
Description:
Silicon carbide mosfet.
Datasheet Details
IMBG120R040M2H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 36 A at TC = 100°C
* RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage
Datasheet Details
IMBG120R040M2H
1.26 MB
Silicon carbide mosfet.
IMBG120R040M2H Distributor
📁 Related Datasheet
📌 All Tags