IMBG40R015M2H Datasheet - Infineon

IMBG40R015M2H MOSFET

IMBG40R015M2H Features

* Ideal for high frequency switching and synchronous rectification

* Commutation robust fast body diode with low Qfr

* Low RDS(on) dependency on temperature

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Recommended gate driving voltage 0 V to 18 V

Datasheet Details

IMBG40R015M2H

1.28 MB

Mosfet.

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