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IMBG40R025M2H G2 MOSFET

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Description

Public IMBG40R025M2H Final datasheet CoolSiC™ 400V CoolSiC™ G2 MOSFET .
1 Maxi.

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Features

* Ideal for high frequency switching and synchronous rectification
* Commutation robust fast body diode with low Qfr
* Low RDS(on) dependency on temperature
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Recommended gate driving voltage 0 V to 18 V

Applications

* SMPS
* Solar PV inverters
* Energy storage, UPS and battery formation
* Class‑D audio
* Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),typ ID Qoss Eoss QG Key Performance Paramet

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