IMCQ120R007M2H - 1200V SiC MOSFET

Infineon

IMCQ120R007M2H Datasheet Preview — Preview of IMCQ120R007M2H PDF

Datasheet Details

Part number	IMCQ120R007M2H
Manufacturer	Infineon ↗
File Size	1.21 MB
Description	1200V SiC MOSFET
Datasheet	IMCQ120R007M2H-Infineon.pdf

IMCQ120R007M2H Product details

Description

Pin definition: Pin 1 Gate Pin 2 Kelvin sense contact Pin 3-11 Source Pin 12-22, Tab Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Type IMCQ120R007M2H Package PG-HDSOP-22-U03 Marking 12M2H007 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-12-12 IMCQ120R007M2H CoolSiC™ 120

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 181 A at TC = 100°C.
RDS(on) = 7.5 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-i.

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Published: May 13, 2025 |