IMCQ120R010M2H 1200V SiC MOSFET

Infineon

Description

IMCQ120R010M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling .
Pin definition:. Pin 1. Gate. Pin 2. Kelvin sense contact. Pin 3-11. Source. Pin 12-22,.

📥 Download Datasheet

IMCQ120R010M2H Datasheet Preview — Preview of IMCQ120R010M2H PDF

Datasheet Specifications

Part number: IMCQ120R010M2H
Manufacturer: Infineon ↗
File Size: 1.26 MB
Datasheet: IMCQ120R010M2H-Infineon.pdf
Description: 1200V SiC MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 138 A at TC = 100°C
* RDS(on) = 10 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage, VG

Applications

* Solid-state circuit breaker / Solid-state relay
* EV Charging
* Online UPS / Industrial UPS
* String inverter
* General purpose drives (GPD)
* CAV
* Servo drives Product validation
* Qualified for industrial applications according to

IMCQ120R010M2H Distributors

📁 Related Datasheet

IMC-0402 IMC-0402-01 IMC-0603 IMC-0603-01 IMC-0805 IMC-0805-01

📌 All Tags

IMCQ120R010M2H 1200V SiC MOSFET Infineon

Infineon IMCQ120R010M2H-like datasheet