IMCQ120R026M2H 1200V SiC MOSFET

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Description

IMCQ120R026M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling .
Pin definition:. Pin 1. Gate. Pin 2. Kelvin sense contact. Pin 3-11. Source. Pin 12-22,.

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Datasheet Specifications

Part number: IMCQ120R026M2H
Manufacturer: Infineon ↗
File Size: 1.21 MB
Datasheet: IMCQ120R026M2H-Infineon.pdf
Description: 1200V SiC MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 58 A at TC = 100°C
* RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage, V

Applications

* Solid-state circuit breaker / Solid-state relay
* EV Charging
* Online UPS / Industrial UPS
* String inverter
* General purpose drives (GPD)
* CAV
* Servo drives Product validation
* Qualified for industrial applications according to

IMCQ120R026M2H Distributors

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IMCQ120R026M2H 1200V SiC MOSFET Infineon

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