IMYR140R008M2H - 1400V SiC MOSFET

Infineon

IMYR140R008M2H Datasheet Preview — Preview of IMYR140R008M2H PDF

Datasheet Details

Part number	IMYR140R008M2H
Manufacturer	Infineon ↗
File Size	1.14 MB
Description	1400V SiC MOSFET
Datasheet	IMYR140R008M2H-Infineon.pdf

IMYR140R008M2H Product details

Description

Pin definition: 1 Drain 2 Source 3 Kelvin sense contact 4 Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technolo Type IMYR140R008M2H Package PG-TO247-4-U08 Marking 14M2H008 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-02-25 IMYR140R008M2H CoolSiC™ 1400 V SiC MOSFET G2 Table of contents T

Features

VDSS = 1400 V at Tvj = 25°C.
IDDC = 147 A at TC = 100°C.
RDS(on) = 8.5 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Package backside suitable for reflow soldering at 260°C, 3 times.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body dio.

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Published: May 20, 2025 |